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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD826 DESCRIPTION *With TO-126 package *Low collector saturation voltage *High DC current gain *Large current capacity APPLICATIONS *For 3V, 6V strobe applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak t=100ms Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 60 20 6 5 8 1.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=3A; IB=60mA(pulse) IC=3A; IB=60mA(pulse) VCB=50V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=2V IC=3A ; VCE=2V(pulse) IC=50mA ; VCE=10V f=1MHz ; VCB=10V 120 95 MIN SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB 2SD826 TYP. MAX 0.5 1.5 1.0 1.0 560 UNIT V V A A 120 45 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=2A ;IB1=-IB2=0.2A VCC=10V; RL=5A 30 300 40 ns ns ns hFE-1 Classifications E 120-200 F 160-320 G 280-560 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD826 Fig.2 Outline dimensions 3 |
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